| PART |
Description |
Maker |
| SPI47N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, NL
|
Infineon
|
| SPU11N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, I-PAK, RDSon=179mOhm, 11A, NL
|
Infineon
|
| SPB21N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=85mOhm, 21A, NL
|
Infineon
|
| BSS169 |
SIPMOS SMALL-SIGNAL-TRANSISTOR
Low Voltage MOSFETs - Depletion MOSFET, 100V, SOT-23, RDSon = 12Ohm, 0.09A, NL
|
Infineon Technologies A...
Infineon Technologies AG
|
| BSP316P |
Low Voltage MOSFETs - Small Signal MOSFET, -100V, SOT-223, RDSon =1.80
SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSP372 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0,31 Ohm, 1.7A, LL
SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
| IRL3103D2 |
FETKY?/a> MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)
FETKY MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)
FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)
|
IRF[International Rectifier]
|
| HGTG18N120BND_07 HGTG18N120BND |
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDPF55N06 FDP55N06 |
N-Channel UniFETTM MOSFET 60V, 55A, 22m
|
Fairchild Semiconductor
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| BUZ32 BUZ32SMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 9.5A, NL
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.4 Ohm, 9.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
|
